Method of etching using hydrofluorocarbon compounds
US6120697A · kind A · utility
9Cited by
21References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1997 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Dec 31, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula C.sub.X H.sub.C F.sub.Z PA1 wherein: x=3, 4 or 5; PA2 2x.gtoreq.z.gtoreq.y; PA2 and y+z=2x+2; and further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.