Process for rapid solid-state formation of refractory nitrides
US6120748A · kind A · utility
7Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Jun 18, 1999 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Jun 18, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/62
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for forming high quality crystalline refractory materials, particularly gallium (Ill) nitride (GaN), from solid precursors. By blending dry reactants in an oxygen and moisture free environment, placing the reactants in a sealed vessel, pressurizing the reactants to in excess of 5 kilobars (5000 atmospheres) and rapidly exposing the reactants to a temperature in excess of about 225.degree. C. The soluble salt by-products are then extracted from the resultant mixture, leaving high purity crystals of the nitride in the form of a fine powder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.