Reflective phaseshift lithography system
US6122037A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 1999 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Jul 21, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention refers to a lithographic device for transferring patterns onto a wafer. The task of the invention is to create a new optical lithographic device with improved resolution and depth of sharpness which will allow semiconductor components to be produced with a higher packing density. According to the invention, an imaging device is used which includes an interferometric device with confocal beam path and a reflection phase shift mask. Based on the achievable resolution and depth of sharpness, the device is suitable for use in DUV step and scan systems for the manufacture of highly integrated semiconductor components. Electron-beam and x-ray lithography only have to be used for smaller grids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.