Resistless device fabrication method
US6124146A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 15, 1998 |
| Grant date | Sep 26, 2000 |
| Priority date | — |
| Expiry date | May 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a material to a semiconductor device having a first mesa structure, a second mesa structure and a valley. Material is deposited from a first angular direction sufficient to substantially mask the valley with a first of the mesa structures and from a second angular direction sufficient to substantially mask the valley with the second mesa structure to form a first lip and a second lip on the respective first and second mesa structures overlying the valley and defining a space therebetween less than the width of the valley. Material is then deposited to the device from a third direction in substantial opposition to the device, the space operating to guide material deposition to the valley to provide discrete material deposition in the valley to form a discrete feature in the valley.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.