Patent · US Expired

Integrated semiconductor memory

US6125073A · kind A · utility

4Cited by

7References

9Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Thoai-Thai Le · Cary, US
Jürgen Lindolf · Friedberg, DE
Eckhard Brass · Unterhaching, DE
Martin Brox · Munich, DE

Key dates

Filing date	Sep 8, 1999
Grant date	Sep 26, 2000
Priority date	—
Expiry date	Sep 8, 2019

Classification

Technology area (CPC G)Physics
CPC primaryG11C8/08
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In an integrated semiconductor memory having a memory cell array divided into memory banks, supply potentials with high drive capability are applied to the memory banks only if the respective memory bank is activated for access to a memory cell. For this purpose a supply voltage assigned to the respective memory bank is controlled by the same address signal as the memory bank. The supply voltage sources generate a word line potential, a bit line potential or a substrate potential. As a result, a power loss is reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.