Process for producing dielectrics and fine single crystal powders and thin film capacitor
US6126743A · kind A · utility
36Cited by
9References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1996 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Jan 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1236
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a process for producing dielectrics which satisfy the formula of: EQU WXMO.sub.3 --(l--w)(XO.sub.y --aGO.sub.z) wherein the symbols are as defined in the specification, which comprises mixing an oxide of X, an oxide of M and an oxide of G or compounds capable of being converted to the above oxides so that the region occupied by the oxides or the compounds is smaller than 0.1 .mu.m in diameter and then, firing the mixture by heating at a temperature at which the mixture can be converted to oxides. A process for producing fine single crystal powders and a thin film capacitor are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.