Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium
US6127016A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1997 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Oct 3, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elemets Ag, In, Te and Sb with the respective atomic percent (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 2.ltoreq..alpha..ltoreq.30, 3.ltoreq..beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 15.ltoreq..delta..ltoreq.83 and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0<.alpha..ltoreq.30, 0<.beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 10.ltoreq..delta..ltoreq.80, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.