Static random access memory cell suitable for high integration density and cell stabilization
US6127705A · kind A · utility
6Cited by
2References
24Claims
0Family size
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Inventor
Key dates
| Filing date | Jul 10, 1995 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Jul 10, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
Abstract
Static random access memory (SRAM) cell is disclosed, which is suitable for high packing density and cell stabilization, including a substrate, a wordline formed over the substrate, including two parallel legs having gates of first and second access transistors, respectively, gates of first and second drive transistors formed between the two parallel legs, and an active area defined in a surface of the substrate under the gates of the first and second access transistors and gates of the first and second drive transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.