Amplification circuit
US6127892A · kind A · utility
12Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1998 |
| Grant date | Oct 3, 2000 |
| Priority date | — |
| Expiry date | Oct 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/372
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An object is to obtain an amplification circuit which provides a high gain even with a low-voltage power supply. The amplification circuit comprises an MOS transistor (M1) having a gate receiving an amplified signal (RFin), a source electrically connected to ground, and a drain electrically connected to a supply voltage (VDD), wherein the back gate-source voltage (Vbs) of the MOS transistor (M1) is made larger as the gate-source voltage (Vgs) of the MOS transistor (M1) becomes larger, thereby making the threshold voltage (VT) of the MOS transistor (M1) smaller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.