Process for producing organically modified oxide, oxynitride or nitride layers by vacuum deposition

US6130002A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Manfred Neumann · Marl, DE
• Siegfried Schiller · Dresden, DE
• Henry Morgner · Dresden, DE
• Nicolas Schiller · Helmsdorf, DE
• Steffen Straach · Dresden, DE

Key dates

• Filing date: Jul 22, 1998
• Grant date: Oct 10, 2000
• Expiry date: Jul 22, 2018

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31663
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of evaporation material comprising nitride-forming evaporation material and one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma zone immediately in front of the substrate. A method for producing at least one organically-modified oxide, oxinitride or nitride layer by vacuum coating on a substrate through plasma-enhanced evaporation of one of oxide and suboxide evaporation material, wherein the at least one layer is deposited through plasma-enhanced, reactive high-rate evaporation of the evaporation material with use of gaseous monomers and a reactive gas including at least one of oxygen and nitrogen, and wherein the evaporation material, gaseous monomers, and reactive gas pass through a high-density plasma…