Semiconductor hetero-interface photodetector
US6130441A · kind A · utility
27Cited by
27References
6Claims
0Family size
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Key dates
| Filing date | Mar 19, 1999 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Mar 19, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.