Electrode of n-type nitridide semiconductor, semiconductor device having the electrode, and method of fabricating the same
US6130446A · kind A · utility
23Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Oct 10, 2000 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.