Interconnect track connecting, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit, and process for producing such a track

US6130460A · kind A · utility

Assignee

• SGS-Thomson Microelectronics S.A. · IT

Inventor

• Joseph Borel · Échirolles, FR

Key dates

• Filing date: Jun 8, 1998
• Grant date: Oct 10, 2000
• Expiry date: Jun 8, 2018

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/91

Abstract

An interconnect track connects, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit. The interconnect track comprises a first track element extending under the highest metallization level, having a first end connected to the gate and having a length greater than a predetermined critical length. This first track element includes an interrupted track portion at a site a first distance less than the critical length away from the first end. This point is compatible with the placement of the metallization level above, and extends between two insulating layers on the same metallization level. The two branches of the interrupted portion are mutually connected by a metallic filling contact which also extends in the insulating support layer of the metallization level immediately above that containing the interrupted track portion.