Patent · US Expired

Process and device for the production of a single crystal

US6132507A · kind A · utility

4Cited by

4References

10Claims

0Family size

Assignee

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG · DE

Inventors

Wilfried von Ammon · Burghausen, DE
Erich Tomzig · Altötting, DE
Janis Virbulis · Burghausen, DE

Key dates

Filing date	Dec 4, 1998
Grant date	Oct 17, 2000
Priority date	—
Expiry date	Dec 4, 2018

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1088
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.