Method for producing homoepitaxial diamond thin films
US6132816A · kind A · utility
7Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1998 |
| Grant date | Oct 17, 2000 |
| Priority date | — |
| Expiry date | Oct 21, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.