Patent · US Expired

Method for fabricating a dopant region

US6133126A · kind A · utility

6Cited by

1References

8Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Hans Reisinger · Grünwald, DE
Martin Franosch · Munich, DE
Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE
Reinhard Stengl · Stadtbergen, DE
Volker Lehmann · Hersbruck, DE
Gerrit Lange · Denzlingen, DE
Hermann Wendt · Grasbrunn, DE

Key dates

Filing date	Sep 20, 1999
Grant date	Oct 17, 2000
Priority date	—
Expiry date	Sep 20, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH10B99/22
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a dopant region is disclosed. The dopant region is formed by providing a semiconductor substrate that has a surface. An electrically insulating intermediate layer is applied to the surface. A doped semiconductor layer is then applied to the electrically insulating intermediate layer, the semiconductor layer being of a first conductivity type and contains a dopant of the first conductivity type. A temperature treatment of the semiconductor substrate at a predefined diffusion temperature is performed, so that the dopant diffuses partially out of the semiconductor layer through the intermediate layer into the semiconductor substrate and forms there a dopant region of the first conductivity type. The electrical conductivity of the intermediate layer is modified, so that an electrical contact between the semiconductor substrate and the semiconductor layer is produced through the intermediate layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.