Semiconductor wafer holder with CVD silicon carbide film coating
US6135054A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Mar 26, 1999 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Mar 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor wafer holder which has a contact part with a held object to be held is described. The contact part is constructed of a sintered silicon carbide substrate and then coated with a dense CVD silicon carbide film which has at least one crystal plane orientation out of the (111), (110), (220) and (200) planes in Miller indices to provide excellent grindability despite high hardness to withstand abrasive wear, thus facilitating surface grinding of the contact part into an ultra smooth and flat surface without dust and pit holes. This composite material has a large modulus of elasticity, a small specific gravity, and a very low coefficient of thermal expansion, creating high strength and little change in spite of exposure heat and maintaining dimensional stability in circuit printing. The sintered material together with the crystallized CVD silicon carbide film of the .beta. structure offers an electric resistance under 10.sup.10 .OMEGA..multidot.cm to provide high conductivity, thereby preventing static dust and facilities cleaning up.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.