Process for producing a carbon film on a substrate

US6136160A · kind A · utility

Assignees

• IMS-Ionen Mikrofabrikationas Systeme · AT
• Universitat Gesamthochschule Kassel · DE
• Ustav Pocitacovych systemov, Slovenska adademia vled · SK

Inventors

• Pavol Hrkut · Bratislava, SK
• Peter Hudek · Bratislava, SK
• Ivaylo W. Rangelow · Kassel, DE
• Hans Loschner · Wien, AT

Key dates

• Filing date: Jul 8, 1999
• Grant date: Oct 24, 2000
• Expiry date: Jul 8, 2019

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C14/35
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.