Thin film transistors
US6136702A · kind A · utility
32Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1999 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Nov 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/621
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni--P on a base conductor, preferably TiN.sub.x, by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.