Power semiconductor device
US6137136A · kind A · utility
12Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1997 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Sep 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
Abstract
An injection enhanced insulated gate bipolar transistor is disclosed in which an average roughness of silicon on the side and bottom surfaces of trench grooves below a gate oxide film is made to be 0.6 nm or smaller. Irregular portions on the surface of silicon of the gate oxide film can be prevented. Thus, lowering of the gate breakdown voltage occurring because of dispersion of the thickness of the gate oxide film due to the irregular portions can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.