EFG crystal growth apparatus
US6139811A · kind A · utility
4Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Mar 25, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/104
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A new EFG (Edge-defined Film-fed Growth) crucible/die configuration is provided which (a) overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during the crystal growth and (b) prevent the crucible/die unit from fracturing its supporting susceptor during cool-down.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.