Integrated infrared detection system
US6140145A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Apr 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
This is an integral IR detector system with at least two epitaxial HgCdTe sensors on integrated silicon or GaAs circuitry and also a method of fabricating such system. The system can comprise: a) integrated silicon or GaAs circuitry 110; b) an epitaxial lattice-match layer (e.g. ZnSe 114) on a top surface of the circuit; c) an epitaxial insulating layer (e.g. CdTe 102) on the lattice-match layer; and d) at least two epitaxial HgCdTe sensors 101,121 on the insulating layer, with the HgCdTe sensors being electrically connected to the circuitry. Preferably, the circuitry is silicon. Preferably, an IR transparent, spacer layer (e.g. CdTe 120 or CdZnTe) is on the HgCdTe sensors and an HgCdTe filter 122 is on the spacer layer. Preferably, at least one of the HgCdTe sensors and the HgCdTe filter is laterally continuously graded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.