Method for driving solid-state imaging device
US6140147A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A method for driving a solid-state imaging device such as a CCD (Charge Coupled Device) which facilitates control of a blooming suppressing voltage and can reduce a voltage required for shuttering. The solid-state imaging device to be driven typically comprises a first one-conductive type region, a second one-conductive type region having a one-conductive type impurity concentration lower than that of the first one-conductive type region and provided on the first one-conductive type region in contact with the first one-conductive type region, an opposite-conductive type region in contact with the second one-conductive type region, and a one-conductive type layer forming a p-n junction together with the opposite-conductive type region and constituting a photodiode portion together with the opposite-conductive type region. When the solid-state imaging device is driven, a blooming suppressing voltage of a reverse bias is applied between the opposite-conductive type region and the first one-conductive type region so as to form a depletion layer edge within the second one-conductive type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.