Method for activating an ohmic layer for a thin film transistor
US6140159A · kind A · utility
2Cited by
7References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 22, 1996 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Apr 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ohmic layer of CMOS TFT is activated at temperature less than 550.degree. C. by doping N-type and P-type dopants into polycrystal semiconductor to form CMOS thin film transistor and then implanting hydrogen ions into CMOS thin film transistor into which the N-type ions and the P-type ions are doped. The hydrogen ions are generated from a plasma which is produced from a hydrogen containing gas(e.g., phosphine or diborane) and the implantation of the hydrogen ions is carried out by a magnetic mass spectroscopy or an ion doping apparatus in the same chamber where the doping of the N-type ions and the P-type ions is carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.