Process of forming a semiconductor capacitor including forming a hemispherical grain statistical mask with silicon and germanium

US6140177A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE
• Martin Franosch · Munich, DE
• Reinhard Stengl · Stadtbergen, DE
• Volker Lehmann · Hersbruck, DE
• Hans Reisinger · Grünwald, DE
• Hermann Wendt · Grasbrunn, DE

Key dates

• Filing date: Feb 9, 1999
• Grant date: Oct 31, 2000
• Expiry date: Feb 9, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/947

Abstract

For manufacturing a capacitor that is essentially suited for DRAM arrangements, column structures that form an electrode of the capacitor are etched upon employment of a statistical mask that is produced without lithographic steps by nucleus formation of Si/Ge and subsequent selective epitaxy. Structure sizes below 100 nm can be realized in the statistical mask. Surface enlargement factors up to 60 are thus achieved.