Patent · US Expired

Method relating to the manufacture of a semiconductor component

US6140194A · kind A · utility

0Cited by
14References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 3, 1998
Grant dateOct 31, 2000
Priority date
Expiry dateMar 3, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/038
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before masks are applied. This makes the positioning of masks less critical because they only have to be positioned within the area of the polysilicon layer. In this way, an accuracy of 0.1 .mu.m or better can be achieved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.