High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring
US6140236A · kind A · utility
22Cited by
24References
15Claims
0Family size
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Key dates
| Filing date | Apr 21, 1998 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Apr 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal interconnect layer that fills in a via hole formed by first depositing a first Al--Cu film on the sidewalls of the via hole at a low temperature and a low sputtering power and then depositing a second Al--Cu film on the first Al--Cu film at a high temperature and high sputtering power. Sputtering is performed in two steps at low and high temperatures within the same sputtering chamber. The deposition at low temperature and low sputtering power provides good coverage in the via hole, and the deposition at high temperature and high sputtering power reduces the process time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.