Method of processing a substrate
US6140251A · kind A · utility
4Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1997 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Dec 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductor substrate, comprising the steps of: heating a substance within a first chamber, at a selected temperature which is above the minimum decomposition temperature of the substance, to cause decomposition of the substance into a predetermined gas; cooling the gas to below the minimum decomposition temperature of the substance; transporting the gas from the first chamber to a second chamber; and exposing a semiconductor substrate, located in the second chamber, to the cooled gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.