Direct view infrared MEMS structure
US6140646A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Aug 5, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus and process for forming an infrared imager suitable for night vision surveillance systems. The infrared imager includes an array of field emissive devices formed within a semiconductor substrate such as a silicon wafer. The field emissive devices each include silicon emitters formed within the silicon substrate and a micro-cantilever including a conductive gate plate suspended above the emitters. The micro-cantilever is formed of a bi-material and bends in response to absorbed infrared radiation, locally changing an electric field applied to the structure, and therefore, the emission current of the emitters. Electrons emitted from the emitters form a visible image on a phosphor plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.