Interleaved stitch using segmented word lines
US6141236A · kind A · utility
34Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 10, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Mar 10, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4097
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A word line stitch mechanism to be used in high-density DRAMs is presented herein. The word line stitch mechanism of the present invention eliminates the problem caused by using the conventional word line stitch methods of the prior art in the high-density DRAMs. In the present invention, the word lines are segmented with an space between the two adjacent word line segments. Thereafter, the contacts between the word line segments and the associated metal layers are established such that the contact overlap areas are completely adjacent to all or a portion of the spaces between the word line segments of the adjacent word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.