Patent · US Expired

Sensor element

US6141243A · kind A · utility

15Cited by

8References

15Claims

0Family size

Assignee

Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

Amer Aslam · Duisburg, DE
Bedrich Hosticka · Rübhausen, DE
Werner Brockherde · Duisburg, DE
Michael Schanz · Gerlingen, DE

Key dates

Filing date	May 10, 1999
Grant date	Oct 31, 2000
Priority date	—
Expiry date	May 10, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH10F30/2823
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A sensor element has a field effect transistor sensitive to a physical quity to be detected. The gate electrode of the transistor is implemented as a floating gate. The sensor element has therefore integrated therein a sensor cell and a non-volatile memory. The operating point of the transistor can be adjusted permanently by means of the floating gate on which charges can be stored in a non-volatile manner. In addition, charges corresponding to a detected physical quantity can be stored on the floating gate via a simple circuit in a non-volatile manner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.