Memory device with sense amplifier that sets the voltage drop across the cells of the device
US6141246A · kind A · utility
21Cited by
25References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1999 |
| Grant date | Oct 31, 2000 |
| Priority date | — |
| Expiry date | Aug 13, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The logic state stored in a memory cell having a Frohmann-Bentchkowsky p-channel memory transistor and a n-channel MOS access transistor is read by a sense amplifier which senses the magnitude of the current output from the memory cell during a read operation. The sense amplifier controls the voltage drop across the memory transistor and the access transistor (and a switching transistor) which, in turn, allows the difference in the magnitudes of the current from the programmed and unprogrammed cells to be optimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.