Electronic device manufacturing apparatus and method for manufacturing electronic device
US6142096A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | May 15, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/5096
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electronic device manufacturing apparatus includes: a reaction chamber including a wall having a ground potential level; a reaction gas inlet for introducing a reaction gas into the reaction chamber; a high frequency power generator for generating a high frequency voltage for exciting the reaction gas into plasma state or dissociated state; a cathode electrode connected to the high frequency power generator; and a floating capacitance formed between a potential level of the cathode electrode and the ground potential level. An impedance adjusting capacitor is inserted so as to be in series with the floating capacitance. The impedance adjusting capacitor has a capacitance value less than that of the floating capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.