Method of producing a through-hole, silicon substrate having a through-hole, device using such a substrate, method of producing an ink-jet print head, and ink-jet print head
US6143190A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/052
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.