Method of manufacturing capacitor included in semiconductor device and the capacitor thereof
US6143597A · kind A · utility
38Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1996 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Jul 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
A method of manufacturing a capacitor comprises a step of forming a first dielectric layer composed of a ferroelectric material or a dielectric material possessing high permittivity on a first electrode, a step of sintering the first dielectric layer, a step of forming a second dielectric layer on the first dielectric layer, and a step of forming a second electrode on the second dielectric layer. By forming the second dielectric layer having small crystal grain size on the first dielectric layer having large crystal grain size, the surface of the capacitor insulating layer becomes flat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.