Process for producing semiconductor substrate
US6143629A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for producing a semiconductor substrate, comprising sealing surface pores of a porous silicon layer and thereafter forming a single-crystal layer on the porous silicon layer by epitaxial growth, intermediate heat treatment is carried out after the sealing and before the epitaxial growth and at a temperature higher than the temperature at the time of the sealing. This process improves crystal quality of the semiconductor substrate having the single-crystal layer formed by epitaxial growth and improves smoothness at the bonding interface when applied to bonded wafers this process enables the detection of the smaller particles on the surface by a laser light scattering method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.