Chemical mechanical polishing composition and method of polishing a substrate
US6143662A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Feb 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a chemical mechanical polishing method for the planarization of shallow trench isolation structure and other integrated circuit structures. The method of the invention comprises the steps of providing a substrate having a plurality of patterned regions and polishing the substrate with a chemical mechanical polishing slurry comprising small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. The chemical mechanical polishing slurries can also include viscosity additives and etchants for use in the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.