Heterojunction field effect transistor and method of fabricating the same
US6144048A · kind A · utility
19Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Dec 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky barrier layer in separate regions between a source electrode and a gate electrode and between a drain electrode and the gate electrode is completely covered with an etching stopper layer. The gate electrode is separated from a cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.