High breakdown-voltage transistor with electrostatic discharge protection
US6144070A · kind A · utility
26Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 1998 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Aug 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor including a source region 506 in a semiconductor body 502; a bulk region 508 in the semiconductor body adjacent the source region; a drain region in the semiconductor body adjacent the bulk region but opposite the source region, the drain region including doped regions 504,514 of n and p dopant types; and a field plate 516 formed over the semiconductor body adjacent the drain region between the drain region and the bulk region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.