Electron generating apparatus, image forming apparatus, and method of manufacturing and adjusting the same
US6144350A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1996 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Oct 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/027
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It is an object of this invention to provide an electron generating apparatus which is hardly influenced by variations in driving voltage, an image forming apparatus using the electron generating apparatus, and a method of manufacturing and adjusting the same. The row wiring layers of a multi-electron-beam source (300) are sequentially selectively switched by a control circuit (302) and applied with a pulse voltage having a value about 1.05 to 1.5 times the maximum value of a normal driving voltage from a DC voltage source (301). The characteristics of all surface conduction electron-emitting devices of the multi-electron-beam source (300) are shifted to the high potential side. With this process, even when the driving voltage becomes high due to superposition of noise and the driving voltage, variations in electron-emitting characteristics caused by the voltage shift characteristics of the surface conduction electron-emitting devices can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.