Spin valve magnetoresistance device and method of designing the same
US6144524A · kind A · utility
17Cited by
1References
21Claims
0Family size
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Key dates
| Filing date | Apr 7, 1999 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Apr 7, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin valve magnetoresistance device including a free magnetic layer, a pinned magnetic layer, a non-magnetic layer disposed between them and a permanent magnet film defining a track width x(in .mu.m) and configured to control magnetic domains of the free magnetic layer. The product of the residual magnetization (in .mu.emu/cm.sup.3) of the permanent magnet film times the thickness (in cm) thereof is given by f(x): EQU f(x)=-11.24(1/x.sup.2)+A, where x.ltoreq.2 .mu.m, and 670 .mu.emu/cm.sup.2 .ltoreq.A.ltoreq.900 .mu.emu/cm.sup.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.