Method of manufacturing a semiconductor device that uses a calibration standard
US6146541A · kind A · utility
7Cited by
23References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1997 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | May 2, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer (11) having a dielectric layer (12) is used as a calibration standard (10) to calibrate thickness measuring equipment in a wafer processing or manufacturing area. The thickness of the dielectric layer (12) is maintained to a desired thickness by heating the calibration standard (10) to remove contaminants from the dielectric layer (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.