Radiation sensitive terpolymer, photoresist compositions thereof and 193 nm bilayer systems
US6146793A · kind A · utility
15Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Feb 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A terpolymer with chemically amplified (acid labile) moieties and organosilicon moieties suitable for use as the binder resin for a photoimageable resist photoresist composition suitable for use in 193 nm photolithographic processes. The terpolymers have the following structural units: ##STR1## where R is a methyl or hydroxyethyl group, R.sup.1 is a hydrogen atom, a methyl group or a --CH.sub.2 COOCH.sub.3 group and R.sup.2 and R.sup.3 are each independently a hydrogen atom or a methyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.