Photoresist using dioxaspiro ring-substituted acryl derivatives
US6146811A · kind A · utility
13Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jul 30, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is photoresist using dioxaspiro ring-substitued acryl derivatives, represented by the following chemical formula I or II. As matrix polymers, homopolymers of dioxaspiro ring-substitued acryl monomers or their copolymers with acryl monomers are provided. The deprotection of the dioxaspiro rings from the matrix polymers, usually accomplished by the action of a photoacid generator, causes a great change in the water solubility of the matrix, thereby allowing the matrix to be used for the photoresist required to have high sensitivity, resolution and contrast.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.