Method for fabricating semiconductor device
US6146972A · kind A · utility
5Cited by
8References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 10, 1998 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jun 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ions are implanted into a silicon nitride film at a dose of not more than 1.times.10.sup.15 cm.sup.-2 so that the projected range of the ions is 20 to 60% of the thickness of the silicon nitride film. This enables the stress of the nitride film to be reduced while enjoying good productivity without introduction of defects into a silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.