Patent · US Expired

Method of manufacturing semiconductor integrated circuit device

US6147001A · kind A · utility

7Cited by
3References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 24, 1997
Grant dateNov 14, 2000
Priority date
Expiry dateApr 24, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3212
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor integrated circuit wherein a patterned wafer polishing machine for uniformly polishing a surface by chemical mechanical polishing is utilized which is provided with a head for holding a wafer and rubbing it on an abrasive surface. A pressure plate provided with vents is held by the head body which is provided with a gas inlet and an elastic film for sealing vents is provided on the end face on the side reverse to the gas inlet side of the pressure plate. A patterned wafer is held by the head as the wafer, pressed by action of the pressure of air from the gas inlet via the elastic film is pressed mechanically by the pressure plate. The polishing surface which is a principal plane on the patterned side of the wafer is mechanochemically polished by the abrasive surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.