Patent · US Expired

Process for separating paraxylene comprising at least two crystallization stages at high temperature

US6147272A · kind A · utility

53Cited by
65References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 1997
Grant dateNov 14, 2000
Priority date
Expiry dateJun 30, 2017

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC07C7/14
  • WIPO fieldOrganic fine chemistry
  • WIPO sectorChemistry

Abstract

A process for producing paraxylene of very high purity from a charge containing a mixture of aromatic hydrocarbons having 7 to 9 carbon atoms in which at least a portion of the charge is made to circulate in a zone suited to enrich a first fraction of paraxylene and at least a portion of said first fraction is purified by at least one high-temperature crystallization in at least one crystallization zone, the process being characterized in that said first paraxylene-enriched fraction is crystallized in a crystallization zone comprising at least two crystallization stages (50,70) at high temperature, and advantageously between +10 and -25 .degree. C. The paraxylene enriching zone can be a crystallization at very low temperature, a selective adsorption or a toluene disproportionation zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.