Resin-encapsulated semiconductor apparatus
US6147374A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1998 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jan 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240.degree. C. to 400.degree. C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230.degree. C. to 300.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.