Semiconductor hetero-interface photodetector
US6147391A · kind A · utility
17Cited by
22References
31Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 19, 1999 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Mar 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2255
Abstract
A method of processing semiconductor films and layers, utilizing heterojunctions, to create a photodetector. Novel combinations of materials, such as silicon and indium gallium arsenide (InGaAs) are combined using wafer fusion techniques to create heterojunctions that cannot be created by any other growth methods. Devices responsive to different regions of the optical spectrum or that have higher efficiencies are created.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.