Electron-emitting device, with coating film made of heat-resistant material and electron source and image-forming apparatus using the device and manufacture method thereof
US6147449A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1995 |
| Grant date | Nov 14, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature at which the material develops a vapor pressure of 1.3.times.10.sup.-3 Pa, than that of a material of the electroconductive film. A manufacturing method for an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.